The diffusion of germanium in silicon
The diffusion of germanium in silicon
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DOI：
10.1063/1.1662371
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发表时间：
1973-03
影响因子：
3.2
通讯作者：
G. Mcvay;A. Ducharme
中科院分区：
文献类型：
--
作者：
G. Mcvay;A. Ducharme
用放射性示踪剂~(71)Ge和薄片技术测量了锗在单晶硅中的扩散。通过考虑杂质离子尺寸错误的预期贡献，分析了由数据确定的4.7 eV的激活能。结果表明，较高的激活能与硅的自扩散是相似的。
The diffusion of germanium in single‐crystal silicon has been measured using the radioactive tracer 71Ge and a thin sectioning technique. The activation energy of 4.7 eV determined from the data is analyzed by considering the expected contribution due to the wrong‐sized impurity ions. It is concluded that the high activation energy observed is expected from analogy to silicon self‐diffusion.