Channel Length Scaling in Graphene Field-Effect Transistors Studied with Pulsed Current-Voltage Measurements
Channel Length Scaling in Graphene Field-Effect Transistors Studied with Pulsed Current-Voltage Measurements
复制标题
DOI：
10.1021/nl103993z
复制
发表时间：
2011-03-01
期刊：
影响因子：
10.8
通讯作者：
Shepard, Kenneth L.
中科院分区：
文献类型：
--
作者：
Meric, Inanc;Dean, Cory R.;Shepard, Kenneth L.
我们研究了石墨烯场效应晶体管（GFET）在短沟道长度下的电流饱和。饱和对于实现器件功率增益所需的低输出电导是必要的。双通道脉冲电流-电压测量可以被执行以消除栅极电介质中的捕获电荷的显著影响，这是石墨烯上的所有氧化物基电介质膜共同的问题。通过脉冲测量，沟道长度小至130 nm的石墨烯晶体管在饱和时实现低至0.3 mS/μ m的输出电导。器件的介电常数与沟道长度无关，与高场传输的速度饱和模型一致。饱和速度有一个密度依赖性与扩散运输光学声子发射限制一致。
We investigate current saturation at short channel lengths in graphene field-effect transistors (GFETs). Saturation is necessary to achieve low-output conductance required for device power gain. Dual-channel pulsed current-voltage measurements cow are performed to eliminate the significant effects of trapped charge in the gate dielectric, a problem common to all oxide-based dielectric films on graphene. With pulsed measurements, graphene transistors with channel lengths as small as 130 nm achieve output conductance as low as 0.3 mS/mu m in saturation. The transconductance of the devices is independent of channel length, consistent with a velocity saturation model of high-field transport. Saturation velocities have a density dependence consistent with diffusive transport limited by optical phonon emission.