An array of 100 Al–Al2O3–Cu SIN tunnel junctions in direct-write trilayer technology
An array of 100 Al–Al2O3–Cu SIN tunnel junctions in direct-write trilayer technology
复制标题
采用直写三层技术的 100 个 Al-Al2O3-Cu SIN 隧道结阵列
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
L. Kuzmin
中科院分区：
文献类型：
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作者：
E. Otto;M. Tarasov;Gustav Pettersson;D. Gustavsson;L. Kuzmin
介绍了用直写工艺制作的4-100个Al-Al_2O_3-Cu SIN隧道结阵列构成的超导-绝缘体-普通金属(SIN)隧道结温度计。该技术的第一步是超导电极的原位蒸发，然后是氧化，然后是正常对电极，第二步是沉积正常的金属吸收材料。这种方法允许人们实现隧道结和吸收体的任何几何形状，而不受与结或吸收体的大小有关的限制，这是使用阴影蒸发技术所不可能的。在300mK下进行的测量表明，所制造的隧道结质量高、漏电流低，并且在该温度下获得了500的Rd/Rn比。这些结被表征为温度传感器，电压与温度的关系测量表明，每个单结的dv/dt为0.5mV K−1，这是这种隧道结的典型特征。温度分辨率为±5µK，远好于此前报道的该类型温度计的±30µK。
We present superconductor–insulator–normal metal (SIN) tunnel junction thermometers made of arrays of 4–100 Al–Al2O3–Cu SIN tunnel junctions fabricated in direct-write technology. The technology is based on in situ evaporation of the superconductive electrode followed by the oxidation and the normal counter-electrode as a first step and deposition of normal metal absorber as a second one. This approach allows one to realize any geometry of the tunnel junctions and of the absorber with no limitation related to the size of the junctions or the absorber, which is not possible using the shadow evaporation technique. Measurements performed at 300 mK showed the high quality of the fabricated tunnel junctions, low leakage currents, and that an Rd/Rn ratio of 500 has been achieved at that temperature. The junctions were characterized as temperature sensors, and voltage versus temperature dependence measurements showed a dV/dT of 0.5 mV K−1 for each single junction, which is typical for this kind of tunnel junction. A temperature resolution of ± 5 µK has been achieved which is much better than the previously reported value of ± 30 µK for this type of thermometer.