Silicon micromachined EBG resonator and two-pole filter with improved performance characteristics
Silicon micromachined EBG resonator and two-pole filter with improved performance characteristics
复制标题
具有改进性能特性的硅微机械 EBG 谐振器和两极滤波器
DOI：
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发表时间：
2003
影响因子：
3
通讯作者：
J. Papapolymerou
中科院分区：
文献类型：
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作者：
T. Euler;J. Papapolymerou
本文提出了一种基于周期电磁带隙结构（EBG）缺陷的45 GHz微机械谐振器，并利用该谐振器设计了一个等波纹带宽为1.4%，损耗为2.3 dB的双极点切比雪夫滤波器。利用深反应离子刻蚀技术在400 μ m/m厚的高阻硅片上实现了周期性带隙结构。谐振器和滤波器可以通过共面波导馈电来接入。
A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebyshev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 /spl mu/m thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.