Emission site control in carbon nanotube field emitters by focused ion and laser irradiation
Emission site control in carbon nanotube field emitters by focused ion and laser irradiation
复制标题
通过聚焦离子和激光照射控制碳纳米管场发射器的发射位点
DOI：
10.1116/1.1527597
复制
发表时间：
2003
影响因子：
1.4
通讯作者：
M. Takai
中科院分区：
文献类型：
--
作者：
A. Sawada;M. Iriguchi;W. Zhao;C. Ochiai;M. Takai
采用镓聚焦离子束（FIBs）辐照铝或铟锡氧化层上的多壁碳纳米管，诱导缺陷并增加碳纳米管（CNTs）的发射位点。当离子辐照剂量为1×1015/cm2时，导通电压从460降至220 V，对应的导通场为3.7 ~ 1.8 V/μm。然而，在1×1016/cm2及以上的高剂量FIB照射下，没有观察到辐射特性的明显改善。由于FIB辐照引起的局部温度升高，导致CNTs熔化。掺钕氟化钇（Nd:YLF）激光的三次谐波照射在网印碳纳米管阴极上，导致导通电压从400 V降至320 V，对应的导通场从3.2 V/μm降至2.6 V/μm，辐射增加了6倍。
Multiwalled carbon nanotubes on aluminum or indium tin oxide layers were irradiated with gallium focused ion beams (FIBs) to induce defects and increase emission sites of carbon nanotubes (CNTs). A turn-on voltage was found to decrease from 460 to 220 V by ion irradiation at a dose of 1×1015/cm2, corresponding to turn-on fields from 3.7 to 1.8 V/μm. However, noticeable improvements in emission characteristics were not observed as a result of high-dose FIB irradiation at and above 1×1016/cm2. Because of the local temperature rise due to the intense FIB this irradiation resulted in melting of CNTs. The third harmonic of a neodymium-doped yttrium fluoride (Nd:YLF) laser light was irradiated over screen-printed CNT cathodes, which resulted in turn-on voltage decreasing from 400 to 320 V, corresponding to turn-on fields from 3.2 to 2.6 V/μm, with increased emissions by a factor of 6.