Investigation of spin voltaic effect in a p-n heterojunction
Investigation of spin voltaic effect in a p-n heterojunction
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DOI：
10.1143/jjap.45.l663
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发表时间：
2006-07-01
期刊：
影响因子：
--
通讯作者：
Munekata, Hiro
中科院分区：
文献类型：
--
作者：
Kondo, Tsuyoshi;Hayafuji, Jun-ji;Munekata, Hiro
报道了n-GaAlAs/p-GaInAs/p-GaAs异质结中圆偏振光相关光电流的模型计算和实验数据。研究发现，在适当的异质结参数下，自旋伏安效应可以在异质结上继续存在，并产生比磁-圆-二向色性背景产生的光电流信号更大的偏振相关光电流信号。
Model calculation and experimental data of circularly-polarized-light-dependent photocurrent in a n-GaAlAs/p-GaInAs/ p-GaAs heterostructure are reported. It is found that, with appropriate heterojunction parameters, spin voltaic effect may survive across the heterojunction and give rise to detectable polarization-dependent photocurrent signals which are greater than those due to the magnetic-circular-dichroism background.