Monte Carlo numerical analysis of target erosion and film growth in a three‐dimensional sputtering chamber
Monte Carlo numerical analysis of target erosion and film growth in a three‐dimensional sputtering chamber
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三维溅射室中靶材侵蚀和薄膜生长的蒙特卡罗数值分析
DOI：
10.1116/1.580179
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
K. Nanbu
中科院分区：
文献类型：
--
作者：
V. V. Serikov;K. Nanbu
提出了一种结合两种数学模型的低压溅射环境的三维蒙特卡罗粒子模拟。一个用于模拟放电气体流动，另一个用于溅射原子输运。该组合用于表征靶侵蚀和膜生长。该模型通过在实际溅射设备（SPF-210 AS，ANELVA Ltd.）中进行的实验测量进行改进。在0.3-10 Pa和0.5-5 sccm的操作压力和流量范围内，分别。大量的数值分析做了寻找可能的原因，测量的不均匀性的目标侵蚀和薄膜生长速率分布。模拟结果表明，在本文所处理的操作和设计条件下，气体流场的非均匀性显得太弱，无法解释实验数据。膜生长速率模拟测量侵蚀率显示出良好的协议与实验数据的各种操作。
A combination of two mathematical models for three‐dimensional Monte Carlo particle simulation of a low pressure sputtering environment is proposed. One is intended for the simulation of a discharge gas flow, and the other for the sputtered atom transport. The combination is used to characterize target erosion and film growth. The models are refined with recourse to experimental measurements made in a practical sputtering apparatus (SPF‐210 AS, ANELVA Ltd.) over the range of operating pressures and flow rates of 0.3–10 Pa and 0.5–5 sccm, respectively. A considerable number of numerical analyses are done to find possible reasons for the measured nonuniformity of target erosion and film growth rate distributions. Simulation results show that under the operating and design conditions treated here the nonuniformity of gas flow field appears to be too weak to explain the experimental data. Film growth rates simulated for measured erosion rates show a good agreement with the experimental data for the various op...