Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening
Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening
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DOI：
10.1021/nn800459e
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发表时间：
2008-11-01
期刊：
影响因子：
17.1
通讯作者：
Shen, Ze Xiang
中科院分区：
文献类型：
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作者：
Ni, Zhen Hua;Yu, Ting;Shen, Ze Xiang
石墨烯沉积在透明且柔性的底物上，通过向一个方向拉伸底物，拉伸到与0.8％相似的拉伸应变。应变石墨烯的拉曼光谱显示2D和G带的显着红移（分别为-27.8和-14.2 cm（-1），每1％应变），由于碳碳键的伸长率。这表明单轴菌株已成功应用于石墨烯。我们还建议，通过在石墨烯上应用单轴应变，可以实现K点可调的带隙。第一原则计算预测，在1％单轴拉伸应变下，石墨烯的带隙开口与300 MeV相似。应变的石墨烯提供了一种实验调整石墨烯的带隙的替代方法，该方法比其他用于在石墨烯中打开带隙的方法更有效，更可控制。此外，我们的结果表明，柔性底物已准备好进行这种应变过程，而拉曼光谱可以用作确定应变的超敏化方法。
Graphene was deposited on a transparent and flexible substrate, and tensile strain up to similar to 0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant red shifts of 2D and G band (-27.8 and -14.2 cm(-1) per 1% strain, respectively) because of the elongation of the carbon-carbon bonds. This indicates that uniaxial strain has been successfully applied on graphene. We also proposed that, by applying uniaxial strain on graphene, tunable band gap at K point can be realized. First-principle calculations predicted a band-gap opening of similar to 300 meV for graphene under 1% uniaxial tensile strain. The strained graphene provides an alternative way to experimentally tune the band gap of graphene, which would be more efficient and more controllable than other methods that are used to open the band gap in graphene. Moreover, our results suggest that the flexible substrate is ready for such a strain process, and Raman spectroscopy can be used as an ultrasensitive method to determine the strain.