Uniaxial magnetocrystalline anisotropy of metal/semiconductor interfaces: Fe/ZnSe(001).
Uniaxial magnetocrystalline anisotropy of metal/semiconductor interfaces: Fe/ZnSe(001).
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DOI：
10.1103/physrevlett.89.267203
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发表时间：
2002-12
影响因子：
8.6
通讯作者：
E. Sjöstedt;L. Nordström;F. Gustavsson;O. Eriksson
中科院分区：
文献类型：
--
作者：
E. Sjöstedt;L. Nordström;F. Gustavsson;O. Eriksson
对立方铁磁体和立方半导体Fe/ZnSe(001)界面的磁矩和面内磁各向异性进行了理论研究。理论证实了观察到的铁膜的单轴各向异性，这一点很有争议。这一结果很重要，因为计算是针对具有正方形环境的完美界面，证明了界面Fe原子的四重对称性被打破，超出了最近的邻近半导体层，通常认为影响很小。结果表明，即使在没有原子驰豫的情况下，单轴各向异性也是由界面上的定向共价键产生的。
A theoretical study of the magnetic moments and the in-plane magnetic anisotropy of an interface between a cubic ferromagnet and a cubic semiconductor, Fe/ZnSe(001), is presented. Theory confirms the observed, much debated, uniaxial anisotropy of the iron film. This result is important since the calculations are for perfect interfaces with squarelike environments, proving that the fourfolded symmetry of the interface Fe atoms is broken beyond the nearest neighboring semiconducting layer, effects that are usually assumed small. It is demonstrated how the uniaxial anisotropy is produced by the directional covalent bonds at the interface, even without atomic relaxations.