Second harmonic microscopy of monolayer MoS2
Second harmonic microscopy of monolayer MoS2
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DOI：
10.1103/physrevb.87.161403
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发表时间：
2013-04-15
影响因子：
3.7
通讯作者：
Zhao, Hui
中科院分区：
文献类型：
--
作者：
Kumar, Nardeep;Najmaei, Sina;Zhao, Hui
我们表明，单层MOS2中缺乏反转对称性会允许强烈的光学第二次谐波产生。 810 nm脉冲的第二个谐波是在机械去角质的单层中产生的，其非线性敏感性为10（-7）m/v。易感性在三层中降低了7倍，并且在均匀的层中降低了大约两个数量级。原理验证第二次谐波显微镜测量是对通过化学蒸气沉积生长的样品进行的，该样品说明了这种效果在快速和无创的晶体方向，厚度均匀性，层堆叠和单晶体域大小的快速和无创应用中的潜在应用。 MOS2和类似材料的原子薄膜。 doi：10.1103/physrevb.87.161403
We show that the lack of inversion symmetry in monolayer MoS2 allows strong optical second harmonic generation. The second harmonic of an 810-nm pulse is generated in a mechanically exfoliated monolayer, with a nonlinear susceptibility on the order of 10(-7) m/V. The susceptibility reduces by a factor of seven in trilayers, and by about two orders of magnitude in even layers. A proof-of-principle second harmonic microscopy measurement is performed on samples grown by chemical vapor deposition, which illustrates potential applications of this effect in the fast and noninvasive detection of crystalline orientation, thickness uniformity, layer stacking, and single-crystal domain size of atomically thin films of MoS2 and similar materials. DOI: 10.1103/PhysRevB.87.161403