Synthesis of an extremely stable ceramic in the system Si/B/C/N using 1-(trichlorosilyl)-1-(dichloroboryl)ethane as a single-source precursor
Synthesis of an extremely stable ceramic in the system Si/B/C/N using 1-(trichlorosilyl)-1-(dichloroboryl)ethane as a single-source precursor
复制标题
使用 1-(三氯甲硅烷基)-1-(二氯硼基)乙烷作为单源前体在 Si/B/C/N 系统中合成极其稳定的陶瓷
DOI：
10.1007/s100190050085
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
M. Jansen
中科院分区：
文献类型：
--
作者：
H. Jüngermann;M. Jansen
在Si/B/C/N系统中发现的一种新材料在高达2000 ℃的极高温度下仍保持非晶态。该材料的组成为Si 2B 2N 5C 4，是该系统中唯一在如此高的温度之前不发生任何微观结构变化的材料。此外，该物质在高达1500°C的温度下具有极高的抗氧化性。采用新型单源前驱体1-（三氯硅基）-1-（二氯硼基）乙烷（TSDE），以廉价的原料，通过简单的一锅法合成了非晶态Si 2B 2N 5C 4。热解陶瓷的结构性能的检查揭示了一个子结构组成的四面体和三角平面协调的硅和硼，分别。Si-C-和B-C-键中存在的分子前体不能区分SiN-和B-N-键中的完全热解陶瓷。EDX和X-射线衍射显示该材料具有均匀的元素分布，并且没有检测到相分离。
A new material discovered in the Si/B/C/N system was found to remain in the amorphous state up to a very high temperature of 2000°C. This material, with the composition Si2B2N5C4, is the only material in this system which does not undergo any microstructural changes until such high temperatures. Furthermore, the substance shows an extremely high resistance to oxidation up to 1500°C. The synthesis of amorphous Si2B2N5C4was achieved by using the novel single-source precursor 1-(trichlorosilyl)-1-(dichloroboryl)ethane (TSDE), which can be synthesized in high yields from inexpensive starting materials in a simple single pot reaction. Examination of the structural properties of the pyrolytic ceramic reveals a substructure consisting of tetrahedrally and trigonally-planar coordinated silicon and boron, respectively. Si-C- and B-C-bonds present in the molecular precursor could not be distinguished from SiN- and B-N-bonds in the fully pyrolized ceramic. EDX and X-ray-diffraction showed the material to have a homogeneous elemental distribution, and no phase separation could be detected.