The influence of deposition parameters on the stress evolution of sputter deposited copper
The influence of deposition parameters on the stress evolution of sputter deposited copper
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沉积参数对溅射沉积铜应力演化的影响
DOI：
10.1016/j.surfcoat.2018.10.059
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发表时间：
2019
影响因子：
5.4
通讯作者：
G. Thompson
中科院分区：
文献类型：
--
作者：
Tyler Kaub;Z. Rao;E. Chason;G. Thompson
在溅射沉积的Cu薄膜的内在应力的生长速率和压力的依赖关系进行了研究和比较的动力学生长模型，其中包含在其描述的生长和精力充沛的贡献应力。由于微观结构也有很强的内在生长应力的影响，我们已经能够系统地控制一个固定的晶粒尺寸在多个生长条件跨越0.012 nm/s至2.4 nm/s的沉积速率和0.267 Pa至2.667 Pa的压力使用种子层之前，薄膜沉积。在高沉积压力下，随着生长速率的增加，应力变得更加拉伸。在低沉积压力状态下，随着沉积速率的增加，应力变得更加拉伸，直到临界交叉点，在临界交叉点处，沉积速率的进一步增加导致应力变得更加压缩。这种交叉已被解释的精力充沛的贡献，以揭示这种行为的应力和固有的高流动性的Cu。从动力学模型的拟合参数和相应的应力贡献进行了提取和比较，其他薄膜和沉积技术。虽然应谨慎使用在比较绝对值，动力学模型揭示了正确的趋势，在预测能量捕获的缺陷之间的低和高迁移率的薄膜，以及类似的生长应力值，这是独立的能量贡献，溅射和电沉积之间。这些结果表明，该动力学模型在拟合不同材料和沉积工艺的内应力行为方面显示出希望。
The growth rate and pressure dependence on the intrinsic stress in sputter deposited Cu thin films has been investigated and compared to a kinetic growth model, which contains both growth and energetic contributions to stress in its description. Since microstructure also has a strong effect on intrinsic growth stress, we have been able to systematically control a fixed grain size over multiple growth conditions spanning 0.012 nm/s to 2.4 nm/s deposition rates and 0.267 Pa to 2.667 Pa pressures using a seed layer prior to film deposition. At high deposition pressures, the stress became more tensile as the growth rate increased. In the low deposition pressure regime, the stress became more tensile with increases in deposition rate until a critical cross-over point where upon further increases in deposition rate resulted in the stress becoming more compressive. This cross-over has been explained in terms of the energetic contributions to the stress and the intrinsic high mobility of Cu to reveal this behavior. The fitting parameters and corresponding stress contributions from the kinetic model were extracted and compared to other films and deposition techniques. Though caution should be used in comparing absolute values, the kinetic model revealed the correct trends in predicting energetic trapping of defects between low and high mobility films as well as similar growth stress values, which are independent of energetic contributions, between sputtering and electrodeposition. These results suggest that the kinetic model shows promise in fitting different materials and deposition techniques intrinsic stress behavior.