Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC
Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC
复制标题
通过原位定制形态和纳米 SiC 中优化 N 掺杂实现宽带微波吸收
DOI：
10.1063/1.5003983
复制
发表时间：
2017-11-27
影响因子：
4
通讯作者：
Zhang, Zhidong
中科院分区：
文献类型：
--
作者：
Hua, An;Wei, Feng;Zhang, Zhidong
SiC优异的介电性能使其具有惊人的电磁波吸收性能。通过简单的一步合成策略，优化了具有原位定制形貌的n掺杂纳米碳化硅。采用新型N源和气体催化剂，利用乙腈（C2H3N）合成了N掺杂纳米sic，其形貌由球形演变为纳米片状。纳米片SiC的表面积显著扩大，以支持更多数量和类型的电偶极子。结合优化的N浓度掺杂，与之前报道的SiC和N掺杂SiC纳米颗粒相比，定制的纳米SiC在2-18 GHz范围内的复合介电和微波吸收性能明显改善。较高的e″和tan δ值归因于优化的n掺杂和新型纳米片形貌强化了极化弛豫。超过-10 dB（90%微波吸收）的宽带反射损耗达到4.1 GHz，吸收器厚度为1.58…
SiC has amazing electromagnetic wave absorption properties based on its excellent dielectric properties. The optimized N-doping nano-SiC with in-situ tailored morphology by a facile one-step synthesis strategy is presented. By using a new N source and gas catalyst, acetonitrile ( C2H3N) was exploited to synthesize N-doped nano-SiC with an evolution of morphology from spherical to nanoflake. The surface area of the nanoflake SiC is significantly expanded to support more quantity and types of electric dipoles. Combining the optimized N concentration doping, the complex dielectric and microwave absorption properties of the tailored nano-SiC are clearly improved in the 2–18 GHz range when compared to previously reported SiC and N-doped SiC nanoparticles. The higher e″ and tan δ values are attributed to fortified polarization relaxation by optimized N-doping and novel nanoflake morphology. A wideband reflection loss exceeding –10 dB (90% microwave absorption) reached 4.1 GHz with an absorber thickness of 1.58 ...