Ambipolar field-effect carrier injections in organic Mott insulators
Ambipolar field-effect carrier injections in organic Mott insulators
复制标题
DOI：
10.1103/physrevb.69.245115
复制
发表时间：
2004-06-01
影响因子：
3.7
通讯作者：
Batlogg, B
中科院分区：
文献类型：
--
作者：
Hasegawa, T;Mattenberger, K;Batlogg, B
本文报道了在基于准一维（Q1 D）Mott-Hubbard绝缘体（BEDT-TTF）（F（2）TCNQ）有机单晶的金属-绝缘体-半导体场效应晶体管（MISFET）器件结构中观察到的双极场效应特性。测量的场效应特性的主要方面是很好地描述了双栅FET模型，它考虑了器件的对称性的双栅FET结构。在门控电流-电压特性的温度依赖性的非线性性质表明，双极场效应载流子注入是目前下降到2 K，其中电极和莫特绝缘体之间的界面势垒电位似乎是非常相似的空穴和电子注入，在鲜明对比的情况下，涉及带绝缘体。
We report ambipolar field-effect characteristics observed in metal-insulator-semiconductor field-effect transistor (MISFET) device structures based on organic single crystals of the quasi-one-dimensional (Q1D) Mott-Hubbard insulator (BEDT-TTF)(F(2)TCNQ). The main aspects of the measured field-effect properties are well described by the symmetric-gate FET model, which considers the device symmetry of triode FET structures. The temperature-dependent nonlinear nature in the gated-current-voltage characteristics indicates that the ambipolar field-effect carrier injections are present down to 2 K, where the interface barrier potential between the electrode and the Mott insulator appears to be very similar for hole and electron injections, in sharp contrast to the situation involving band insulators.