Development for ultraviolet vertical cavity surface emitting lasers
Development for ultraviolet vertical cavity surface emitting lasers
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DOI：
10.1117/12.2212617
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发表时间：
2014-07
期刊：
影响因子：
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通讯作者：
Yuh-Shiuan Liu;T. Kao;K. Mehta;S. Shen;P. Yoder;T. Detchprohm;R. Dupuis;H. Xie;F. Ponce
中科院分区：
文献类型：
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作者：
Yuh-Shiuan Liu;T. Kao;K. Mehta;S. Shen;P. Yoder;T. Detchprohm;R. Dupuis;H. Xie;F. Ponce
报道了我们目前紫外垂直腔面发射激光器的研究进展，其中包括一个由40对Si掺杂的四分之一波长层Al 0.12Ga 0.88N和GaN组成的导电n-DBR的研制。在368 nm处测得91.6%的峰值反射率，并且在100 mA的最大测量电流附近提取了17.7Ω的串联电阻。并利用所建立的n-DBR实现了微腔发光二极管。在40对Al0.12Ga0.88N/GaNn-DBR上生长了2λ腔，获得了峰值波长为371.4nm、线宽为5.8nm的激光输出。
We report our current development progress of ultraviolet vertical-cavity surface-emitting lasers, which included the development of an electrically conducting n-DBR consisting of 40-pairs of Si-doped quarter-wavelength layers of Al0.12Ga0.88N and GaN. A peak reflectivity of 91.6% at 368 nm was measured and a series resistance of 17.7Ω was extracted near the maximum measured current of 100 mA. Furthermore, a micro-cavity light emitting diode was demonstrated by utilizing the established n-DBR. A 2λ cavity was subsequently grown on the 40-pair Al0.12Ga0.88N/GaN n-DBR and a peak wavelength of 371.4 nm was observed with spectral linewidth of 5.8 nm.