PMTJ Temperature Sensor Utilizing VCMA
PMTJ Temperature Sensor Utilizing VCMA
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DOI：
10.1109/iscas.2019.8702688
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发表时间：
2019-05
期刊：
影响因子：
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通讯作者：
Abdelrahman G. Qoutb;E. Friedman
中科院分区：
文献类型：
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作者：
Abdelrahman G. Qoutb;E. Friedman
热感知系统能够根据局部温度控制分布式CMOS模块，以提高系统功率、速度和可靠性。最终目标是多个原位温度传感器，接近CMOS器件层，分布在芯片上，物理上小，泄漏几乎为零功率。磁隧道结（MTJ）能够提供这种能力。MTJ是一种CMOS兼容器件，在CMOS器件层之上的金属层内制造。提出了一种利用MTJ作为热传感器的方法。该方法在反并行状态下运行MTJ，与并行状态相比，MTJ对热变化更敏感。该方法利用器件磁性、热稳定性和相对于施加的传感电压的电阻来感应环境温度。结果基于实验提取的垂直电压控制磁各向异性MgO|CoFeB MTJ参数。在感应电压为0.2伏时，器件反并联电阻的变化可达每度开尔文16 Ω。
Thermal aware systems are able to control distributed CMOS blocks based on the local temperature to enhance system power, speed, and reliability. The ultimate objective is multiple in situ temperature sensors, close to the CMOS device layer, distributed over the die, physically small, and leaking almost zero power. Magnetic tunnel junctions (MTJ) are able to provide this capability. An MTJ is a CMOS compatible device, fabricated within the metallic layers, above the CMOS device layers. A method for using an MTJ as a thermal sensor is presented. The method operates MTJs in an antiparallel state where an MTJ is more sensitive to thermal variations as compared to the parallel state. The method exploits device magnetism, thermal stability, and resistance with respect to an applied sensing voltage to sense the ambient temperature. The results are based on experimentally extracted parameters of a perpendicular and voltage controlled magnetic anisotropy MgO|CoFeB MTJ. A change in the device antiparallel resistance of up to 16 Ω per degree Kelvin at a sensing voltage of 0.2 volts is exhibited.