Composition dependence of energy storage properties of antiferroelectric (Pb,Y)(Sn,Zr)O3 thin film capacitors
Composition dependence of energy storage properties of antiferroelectric (Pb,Y)(Sn,Zr)O3 thin film capacitors
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DOI：
10.7567/jjap.57.11uf08
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发表时间：
2018-09
影响因子：
1.5
通讯作者：
S. Fukuda;Y. Hashizume;T. Nakajima;S. Okamura
中科院分区：
文献类型：
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作者：
S. Fukuda;Y. Hashizume;T. Nakajima;S. Okamura
研究了化学溶液沉积法制备的(Pb0.02，Y0.98)(Snx，Zr1−x)O3(0≤x≤0.6)薄膜的反铁电性能和储能性能。可恢复储能密度Ureco从x=0时的15.9J/cm~3线性下降到x=60at时的8.5J/cm~3。%。储能效率η随x的增加而增加，最高可达40at。%，x=20at时最大为68.4%。%。对电场脉冲引起的电荷响应进行了时间域测量，以评估充放电过程的能量性能。施加E=380kV/cm后，平均放电功率密度为4.4kW/cm3，最大放电功率密度为740kW/cm3。掺锡的(Pb，Y)(Snx，Zr)O_3薄膜表现出良好的反铁电性能，20At。在本研究中，%锡取代的薄膜表现出很好的能量性能。
The antiferroelectric properties and energy storage performance of (Pb0.02,Y0.98)(Snx,Zr1−x)O3 (0 ≤ x ≤ 0.6) thin films fabricated by chemical solution deposition (CSD) were investigated. The recoverable energy storage density Ureco linearly decreased from 15.9 J/cm3 at x = 0 to 8.5 J/cm3 at x = 60 at. %. The energy storage efficiency η increased with increasing x up to 40 at. % and showed a maximum of 68.4% at x = 20 at. %. Time domain measurements of the charge response induced by an electric field pulse were performed to evaluate the energy performance of charging and discharging processes. The average discharging power density after applying E = 380 kV/cm was 4.4 kW/cm3 and the maximum discharging power density was evaluated to be 740 kW/cm3. The Sn-substituted (Pb,Y)(Snx,Zr)O3 thin films showed a well-defined antiferroelectric property and the 20 at. % Sn-substituted thin film exhibited great energy performance in this study.