Microscopic modeling of gain and luminescence in semiconductors
Microscopic modeling of gain and luminescence in semiconductors
复制标题
半导体增益和发光的微观建模
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
W. Chow
中科院分区：
文献类型：
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作者：
J. Hader;J. Moloney;S. Koch;W. Chow
回顾了用于计算半导体激光器光学材料特性的全微观方法的能力。这些计算结果与测量数据之间的多次比较表明该方法与实验产生了极好的定量一致性。概述了这种方法如何允许人们仅根据低强度光致发光 (PL) 光谱来预测高功率工作条件下器件的光学特性。讨论了单量子阱结构和多量子阱结构、超晶格、II 型量子阱和量子点以及各种材料系统中的增益、吸收、PL 和线宽增强因子光谱的示例。
The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.