Growth and characterization of Fe(100)/InAs(100) hybrid structures
Growth and characterization of Fe(100)/InAs(100) hybrid structures
复制标题
Fe(100)/InAs(100)杂化结构的生长和表征
DOI：
10.1116/1.1421563
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发表时间：
2001
影响因子：
1.4
通讯作者：
K. Mukasa
中科院分区：
文献类型：
--
作者：
H. Ohno;K. Yoh;T. Doi;A. Subagyo;K. Sueoka;K. Mukasa
我们报道了在InAs(100)衬底上生长平面/图案化Fe薄膜，并用反射高能电子衍射、低能电子衍射、超导量子干涉仪和四端接触电阻测量对其进行了表征。在23 °C和175 °C的生长温度下，在InAs(10 0)衬底上外延生长了体心立方Fe晶体。有图案化的Fe丝阵列显示出明显的单轴形状各向异性，易轴沿丝方向。发现其矫顽力依赖于生长温度和铁丝的宽度。Fe/n-InAs的四端接触电阻测量表明，Fe与InAs衬底形成了良好的欧姆接触，其电阻率约为10−6Ω cm~2。与高温生长的样品相比，室温生长的样品表现出同样好的甚至更好的磁特性和电学特性。这些结果表明，Fe/InAs杂化结构具有良好的电性能。
We report on the growth of planar/patterned Fe thin films on InAs(100) substrates and their subsequent characterization using reflection high-energy electron diffraction, low-energy electron diffraction, superconducting quantum interference device, and four-terminal contact resistance measurements. Epitaxial growth of body-centered-cubic Fe crystal on InAs(100) was verified for growth temperatures of 23 °C and 175 °C. A patterned Fe wire array showed clear uniaxial shape anisotropy with the easy axis along the wire direction. Its coercive force was found to depend on the growth temperature and the width of the Fe wires. Four-terminal contact resistance measurement of Fe/n-InAs revealed that Fe forms decent ohmic contact to the InAs substrate with a resistivity of the order of 10−6 Ω cm2. Samples grown at room temperature showed equally decent or even better magnetic and electrical characteristics than those obtained by higher temperature growth. These results indicate that the Fe/InAs hybrid structures ha...