A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes
A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes
复制标题
体二极管关断引起功率MOSFET自开通现象的研究
DOI：
10.1587/elex.11.20140350
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
T. Funaki
中科院分区：
文献类型：
--
作者：
T. Funaki
SiC功率器件通常以快速开关操作。功率转换电路中的快速开关操作受到功率MOSFET的自导通现象的影响，其中栅极电压被桥电路中另一侧的MOSFET的导通操作引起波动。当波动的栅极电压超过阈值栅极电压时，自导通导致大的功率损耗。本文分析讨论了MOSFET的自导通现象，这种现象与其体二极管的关断有关，而体二极管的关断是由桥路另一端的MOSFET的导通引起的。通过实验对该分析进行了评价。
SiC power devices generally operate with fast switching. The fast switching operation in power conversion circuits suffer from the self turn-on phenomenon of a power MOSFET in which the gate voltage is induced to fluctuate by the turn-on operation of the MOSFET on the other side in the bridge circuit. The self turn-on results in a large power loss, when the fluctuating gate voltage exceeds the threshold gate voltage. This paper analytically discusses the self turn-on phenomenon of the MOSFET related to the turn-off operation of its body diode, which is initiated by the turn-on operation of the MOSFET on the other side in the bridge. This analysis was evaluated experimentally.