Long-wavelength quantum dot FP and DFB lasers for high temperature applications
Long-wavelength quantum dot FP and DFB lasers for high temperature applications
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适用于高温应用的长波长量子点 FP 和 DFB 激光器
DOI：
10.1117/12.905873
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Y. Arakawa
中科院分区：
文献类型：
--
作者：
T. Kageyama;K. Takada;K. Nishi;M. Yamaguchi;R. Mochida;Y. Maeda;H. Kondo;K. Takemasa;Y. Tanaka;T. Yamamoto;M. Sugawara;Y. Arakawa
耐高温（>125°C）的长波长半导体激光器作为各种恶劣环境中的光源具有吸引力。在这里，我们报告极高的温度连续波（CW）操作的量子点激光器在GaAs衬底上发射在1300 nm范围内，通过提高增益和增加量子点有源层的量子化能量分离。在分子束外延过程中，自组装InAs量子点的In外扩散的抑制显着降低了不均匀加宽，保持了高的量子点片密度。QD-FP激光器表现出220°C的长波长激光的创纪录的高连续激射温度，QD-DFB激光器也表现出150°C的高连续激射温度，通过采用高增益QD活性介质。
High temperature (>125°C) resistant long-wavelength semiconductor lasers are attractive as light sources in a variety of harsh environments. Here, we report extremely high temperature continuous-wave (CW) operation of QD lasers on GaAs substrate emitted at 1300-nm-range by enhancing gain and increasing the quantized-energy separation of the QD active layers. A suppression of the In out-diffusion during MBE from self-assembled InAs QDs significantly reduced inhomogeneous broadening with high QD sheet density maintained. QD-FP laser exhibited record high CW-lasing temperature for long-wavelength laser of 220°C and QD-DFB laser also exhibited high CW-lasing temperature of 150°C by employing high gain QD active media.
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H