Thermoelectric properties of Cu-doped n-type (Bi2Te3)0.9-(Bi2-xCuxSe3)0.1(x = 0-0.2) alloys
Thermoelectric properties of Cu-doped n-type (Bi2Te3)0.9-(Bi2-xCuxSe3)0.1(x = 0-0.2) alloys
复制标题
DOI：
10.1016/j.jssc.2007.10.013
复制
发表时间：
2007-12
影响因子：
3.3
通讯作者：
J. Cui;L. Mao;Weiyou Yang;X. Xu;D. Chen;W. Xiu
中科院分区：
文献类型：
--
作者：
J. Cui;L. Mao;Weiyou Yang;X. Xu;D. Chen;W. Xiu
采用放电等离子烧结技术制备了(Bi2Te3)0.9-(Bi2−xCuxSe3)0.1(x=0~0.2)合金，并对其结构和热电性能进行了研究。Rietveld分析表明，掺铜母合金中约9.0%的铋原子被铜原子占据，只有不到4.0wt%的第二相Cu2.86Te2析出。测量表明，少量的Cu(x⩽)的引入可以降低晶格的热导率(κL)，提高电导率和塞贝克系数。在417K时，x=0.1时的最佳无因次优值(ZT)为0.98，明显高于相同工艺制备的无铜Bi2Se0.3Te2.7(ZT=0.66)和Ag掺杂合金(ZT=0.86)。
n-Type (Bi2Te3)0.9–(Bi2−xCuxSe3)0.1(x=0–0.2) alloys with Cu substitution for Bi were prepared by spark plasma-sintering technique and their structural and thermoelectric properties were evaluated. Rietveld analysis reveals that approximate 9.0% of Bi atomic sites are occupied by Cu atoms and less than 4.0wt% second phase Cu2.86Te2precipitated in the Cu-doped parent alloys. Measurements show that an introduction of a small amount of Cu (x⩽0.1) can reduce the lattice thermal conductivity (κL), and improve the electrical conductivity and Seebeck coefficient. An optimal dimensionless figure of merit (ZT) value of 0.98 is obtained for x=0.1 at 417K, which is obviously higher than those of Cu-free Bi2Se0.3Te2.7(ZT=0.66) and Ag-doped alloys (ZT=0.86) prepared by the same technologies.