High reflectance membrane-based distributed Bragg reflectors for GaN photonics
High reflectance membrane-based distributed Bragg reflectors for GaN photonics
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DOI：
10.1063/1.4768806
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发表时间：
2012-11-26
影响因子：
4
通讯作者：
Han, Jung
中科院分区：
文献类型：
--
作者：
Chen, Danti;Han, Jung
用III-氮化物制备高反射分布布拉格反射器(DBR)是腔光子学的重要组成部分。在这项工作中，我们报道了一种用于蓝绿光器件的膜基GaN/气隙DBR的制备。膜DBRS的形成依赖于最近发现的一种电化学过程，在该过程中，通过调节电导率而不是化学成分来实现选择性刻蚀，从而大大减轻了制作外延DBR的负担。微反射率测量表明，薄膜的峰值反射率在98%以上，并且只有4对GaN/气隙结构的宽阻带。DBRS上InGaN多量子阱(MQW)的微光致发光光谱显示线宽减小，发射效率提高。在DBR上用银覆盖多量子阱后，明显的线宽变窄，表明由于平面微腔的存在，自发辐射发生了改变。(C)2012年美国物理研究所。[http://dx.doi.org/10.1063/1.4768806]
Preparation of highly reflective distributed Bragg reflectors (DBRs) from III-nitrides is an important building block for cavity photonics. In this work, we report the fabrication of a membrane-based GaN/air-gap DBR for blue/green light emitting devices. The formation of membrane DBRs relies on a recently discovered electrochemical procedure in which selective etch is achieved by adjusting the conductivity rather than chemical composition, thus relieving greatly the burden in creating epitaxial DBRs. Micro-reflectance measurement shows over 98% peak reflectance and a wide stopband with only four pairs of GaN/air-gap layers. Micro-photoluminescence spectra of InGaN multiple quantum wells (MQWs) on DBRs show reduced linewidth and improved emission efficiency. After capping the MQWs on DBRs with silver, a significant linewidth narrowing indicates the modification of spontaneous emission due to the presence of a planar microcavity. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768806]