Properties of sputtered full Heusler alloy Cr2MnSb and its application in a magnetic tunnel junction
Properties of sputtered full Heusler alloy Cr2MnSb and its application in a magnetic tunnel junction
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DOI：
10.1088/1361-6463/ab3fc6
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发表时间：
2019-08
期刊：
影响因子：
--
通讯作者：
S. Gupta;F. Matsukura;H. Ohno
中科院分区：
文献类型：
--
作者：
S. Gupta;F. Matsukura;H. Ohno
采用磁控溅射法在MgO（0 0 1）衬底上沉积了存款30 nm厚的Cr2 MnSb薄膜。X射线衍射分析表明，退火促进了Cr2 MnSb从沉积态的非晶态向部分晶化相的晶化，且随着退火温度的升高，晶化程度提高。在高于300 °C的温度下退火后，晶化相表现出完全的B2和部分的L21有序。磁性和磁输运性质表明，退火后的Cr2 MnSb在~350 K下表现出磁有序性，在300 °C下退火的样品具有小的磁矩，0.3μB/公式单位。采用Cr2 MnSb作为磁性隧道结的电极，观察了在外加磁场作用下磁化方向反转时，结电阻的变化。
We deposit 30 nm thick Cr2MnSb films on a MgO(0 0 1) substrate by magnetron sputtering. X-ray diffraction reveals that the annealing promotes the crystallization of Cr2MnSb from amorphous at as-deposited state to partially crystallized phase, and that the crystallinity improves by raising the annealing temperature. The crystallized phase exhibits full B2 and partial L21 ordering after the annealing above 300 °C. The magnetic and magneto-transport properties reveal that the annealed Cr2MnSb shows magnetic ordering up to ~350 K with small magnetic moment, 0.3µB/formula unit for the sample annealed at 300 °C. We adopt Cr2MnSb as one of the electrodes in magnetic tunnel junctions (MTJs), and observe the switching of junction resistance, when the magnetization direction is reversed by sweeping an external magnetic field.