Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy
Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy
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DOI：
10.1116/1.1525006
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发表时间：
2002-12
影响因子：
1.4
通讯作者：
P. Bennett;B. Ashcroft;Zhian He;R. Tromp
中科院分区：
文献类型：
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作者：
P. Bennett;B. Ashcroft;Zhian He;R. Tromp
我们报道了在T ~ 850°C下Ti - Si（111）沉积过程中自发纳米线（NW）形成的原位低能电镜观察。NWs主要沿{110}方向定向，典型尺寸为50纳米宽，20纳米高，几微米长。即使在温度高到足以使电线收缩的情况下，NW形状仍然存在，这表明这些是平衡形状。在生长过程中，西北方向在两端以恒定的速率前进，与西北方向的长度或与在两端堆积的台阶的碰撞无关。我们认为生长过程中的限速动力学步骤是岛端硅化物的反应。在生长过程中相交的NWs不会融合，在退火时会分离。偶尔，它们会形成一个临时连接点，在振荡周期中连接和断开。
We report in situ low-energy electron microscopy observations of spontaneous nanowire (NW) formation during deposition of Ti on Si(111) at T∼850 °C. The NWs are oriented primarily along {110} directions, with typical dimensions 50 nm wide, 20 nm high, and several microns long. The NW shape persists even at temperatures high enough to shrink the wires, suggesting that these are equilibrium shapes. During growth, the NW advances at both ends at a constant rate, independent of NW length or collisions with steps, which pile up at the ends. We argue that the rate-limiting kinetic step during growth is the reaction of silicide at the island ends. NWs that intersect during growth do not fuse, and will separate upon annealing. Occasionally, they form a temporary junction that connects and disconnects in an oscillating cycle.