Vertical charge imbalance effect on 600 V-class trench-filling superjunction power MOSFETs

Vertical charge imbalance effect on 600 V-class trench-filling superjunction power MOSFETs
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DOI：
10.1109/ispsd.2011.5890852
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发表时间：
2011-05
期刊：
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs
影响因子：
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通讯作者：
T. Tamaki;Y. Nakazawa;H. Kanai;Y. Abiko;Y. Ikegami;M. Ishikawa;E. Wakimoto;T. Yasuda;S. Eguchi
T. Tamaki;Y. Nakazawa;H. Kanai;Y. Abiko;Y. Ikegami;M. Ishikawa;E. Wakimoto;T. Yasuda;S. Eguchi
中科院分区：
其他
文献类型：
--
作者：
T. Tamaki;Y. Nakazawa;H. Kanai;Y. Abiko;Y. Ikegami;M. Ishikawa;E. Wakimoto;T. Yasuda;S. Eguchi

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采用解析解和数值解相结合的方法，对采用沟槽填充法制备的600v级超结mosfet进行了研究。为了精确控制装药，仔细考虑了沟槽锥度和p柱轮廓的影响。所制备的SJ-MOSFET击穿电压（Vb）、比导通电阻（RonAa）和栅极漏极电荷（Qgd）分别为736 V、16.4 mΩ-cm2和6 nC。
600V-class superjunction (SJ) MOSFETs fabricated by trench-filling process are investigated by analytical and numerical solutions with experimental results. The careful consideration on the effects of trench taper and p-column profile is given for accurate charge control. The breakdown voltage (Vb), specific on-resistance (RonAa), and gate-to-drain charge (Qgd) of 736 V, 16.4 mΩ-cm2, and 6 nC, respectively, have been achieved for the fabricated SJ-MOSFET.