Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting
Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting
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DOI：
10.1063/1.4903246
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发表时间：
2014-12-01
影响因子：
4
通讯作者：
Wang, T.
中科院分区：
文献类型：
--
作者：
Benton, J.;Bai, J.;Wang, T.
我们报告了一种经济有效的方法来制造基于 GaN 的纳米多孔结构，用于可再生氢生产的应用。 KOH 溶液中的光电化学蚀刻已被用来制造 GaN 和 InGaN/GaN 纳米多孔结构，孔径范围为 25 至 60 nm，通过控制蚀刻剂浓度和施加电压获得。与生长的平面器件相比，纳米多孔结构的光电流显着增加，高达四倍。 GaN 能带边缘附近的入射光子转换效率高达 46%。 (C) 2014 AIP 出版有限责任公司。
We report a cost-effective approach to the fabrication of GaN based nanoporous structure for applications in renewable hydrogen production. Photoelectrochemical etching in a KOH solution has been employed to fabricate both GaN and InGaN/GaN nanoporous structures with pore sizes ranging from 25 to 60 nm, obtained by controlling both etchant concentration and applied voltage. Compared to as-grown planar devices the nanoporous structures have exhibited a significant increase of photocurrent with a factor of up to four times. An incident photon conversion efficiency of up to 46% around the band edge of GaN has been achieved. (C) 2014 AIP Publishing LLC.