Analytical extraction of via near-field coupling using a multiple scattering approach
Analytical extraction of via near-field coupling using a multiple scattering approach
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使用多重散射方法分析提取通孔近场耦合
DOI：
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发表时间：
2013
期刊：
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通讯作者：
C. Schuster
中科院分区：
文献类型：
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作者：
S. Muller;A. Hardock;R. Rímolo;H. Bruns;C. Schuster
本文研究了紧密间隔的通孔之间的近场耦合。近场耦合是非传播（高阶）径向波导模式的结果。尽管由于这些模式随距离的强烈衰减，对于印刷电路板中的典型通孔几何形状来说这是二阶效应，但这种耦合可能与高密度设计中的特殊情况相关。在本文中，我们应用多重散射方法对两个紧密耦合的过孔进行精确分析，并获得这种情况下的有效近端和远端耦合电容。耦合电容的评估显示了近场耦合如何取决于通孔间距和其他几何参数。基于此评估，提供了一个经验公式，可以估计最小距离，超过该距离可以忽略近场耦合。对于板级的典型几何形状，具有明显近场耦合的最大间隔低于 30 mil。
This paper studies the near-field coupling between closely spaced vias. The near-field coupling is a consequence of non-propagating (higher order) radial waveguide modes. Although it is a second order effect for typical via geometries in printed circuit boards due to the strong attenuation of these modes with distance, this coupling can become relevant for special cases in high density designs. In this paper we apply a multiple scattering approach to carry out an accurate analysis of two closely coupled vias, and obtain the effective near- and far- end coupling capacitances for this case. An evaluation of the coupling capacitances shows how the near-field coupling depends on the via separation and other geometrical parameters. Based on this evaluation, an empirical formula is provided that allows to estimate the minimum distance above which near-field coupling can be neglected. For typical geometries at board level, the maximum separation to have a noticeable near field coupling is below 30 mil.