Temperature-dependent growth morphology of a semiconductor-metal interface: Ge/Ta(110).
Temperature-dependent growth morphology of a semiconductor-metal interface: Ge/Ta(110).
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半导体-金属界面的温度依赖性生长形态：Ge/Ta(110)。
DOI：
10.1103/physrevb.32.1077
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
Weaver
中科院分区：
文献类型：
--
作者：
Ruckman;del Giudice M;Weaver
利用同步辐射光电发射和低能电子衍射（LEED）技术研究了Ge/Ta（110）界面随Ge覆盖范围和温度（25≤T≤980℃）的变化规律。价带和核能级的结果表明，室温下界面上没有Ta和Ge原子的混合，而是形成了Ge/Ta界面态。光电发射数据与LEED结果的比较表明，低覆盖的化学吸收结构随着覆盖逐渐演变为高度无序的Ge层。加热诱导形成具有平均组成tag2的反应覆盖层。然而，最初的反应相互扩散发生在较低的温度下，而不是那些报道的形成块状锗化钽的温度。提出了反应层的形态模型。
The Ge/Ta (110) interface is studied as a function of Ge coverage and temperature (25≤ T≤ 980 C) using synchrotron-radiation photoemission and low-energy-electron diffraction (LEED). Valence-band and core-level results indicate that no intermixing of the Ta or Ge atoms occurs across the interface at room temperature but that Ge/Ta interface states are formed. Comparison of the photoemission data with LEED results suggests that the low-coverage chemisorbed configuration evolves with coverage into a highly disordered Ge overlayer. Heating induces formation of a reacted overlayer with average composition TaGe 2. However, the initial reactive interdiffusion occurs at lower temperatures than those reported for the formation of bulk tantalum germanides. A model is presented for the morphology of the reacted layer.