MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr2(Ta1−x,Nbx)2O7 Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr2(Ta1−x,Nbx)2O7 Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
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等离子体物理气相沉积和氧自由基处理形成的低介电常数铁电 Sr2(Ta1−x,Nbx)2O7 的 MFIS 结构器件
DOI：
10.1080/10584580490892665
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
I. Takahashi;H. Sakurai;T. Isogai;Kiyoshi Funaiwa;M. Hirayama;A. Teramoto;S. Sugawa;T. Ohmi
研究了一种应用于FFRAM的低介电常数铁电Sr2(Ta1−x,Nbx)2O7成膜技术。通过等离子体物理气相沉积和微波激发（2.45 GHz）高密度（> 1012 cm−3）低温（< 1 eV） Kr/O2等离子体（氧自由基处理）实现了STN电容器的高铁电性能。氧自由基处理能在400℃时有效氧化STN。此外，我们还成功开发了一种新技术，通过氧自由基处理直接在绝缘层（如SiO2和Si3N4）上结晶铁电材料。采用该技术，成功实现了MFIS装置的操作，其滞留时间超过24小时。
A low dielectric constant ferroelectric Sr2(Ta1 −x,Nbx)2O7 film formation technology which is applied to FFRAM has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and microwave-excited (2.45 GHz) high-density (> 1012 cm−3) low electron temperature (< 1 eV) Kr/O2 plasma (oxygen radical treatment). Oxygen radical treatment can oxidize STN effectively at 400°C. Furthermore, we have successfully developed a new technology that crystallizes a ferroelectric material on an insulator layer such as SiO2 and Si3N4 directly by oxygen radical treatment. Using this technology, MFIS device operation has been successfully achieved and its retention time is more than 24 hours.