The properties of Schottky junctions on Nb-doped SrTiO3 (001)
The properties of Schottky junctions on Nb-doped SrTiO3 (001)
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DOI：
10.1016/s0169-4332(97)80114-6
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发表时间：
1997-06
影响因子：
6.7
通讯作者：
Takashi Shimizu;N. Gotoh;Naoya Shinozaki;H. Okushi
中科院分区：
文献类型：
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作者：
Takashi Shimizu;N. Gotoh;Naoya Shinozaki;H. Okushi
对金属/Nb掺杂SrTiO_3（NSTO）（001）结的表面处理进行了系统的研究。利用高纯臭氧对NSTO表面进行表面处理后，在NSTO表面上原位沉积金属电极，可以获得控制良好的金属/NSTO（001）界面。结果，Au/NSTO和Cu/NSTO肖特基势垒（SB）结的电流-电压（i-v）特性显示出超过九个数量级的高整流比。由i-v特性评价的SB高度对于Au/NSTO为1.42 eV，对于Cu/NSTO为1.02 eV。
A systematic investigation of surface treatments for metal/Nb-doped SrTiO3(NSTO) (001) junctions has been described. Well-controlled metal/NSTO (001) interfaces have been obtained using in-situ deposition of metal electrodes on a NSTO surface soon after the surface treatment using high-purity ozone. As a result, the current-voltage (i–v) characteristics of the Au/NSTO and Cu/NSTO Schottky barrier (SB) junctions show high rectification ratios over nine orders of magnitude. The SB heights evaluated from the i–v characteristics are 1.42 eV for Au/NSTO and 1.02 eV for Cu/NSTO.