Electron doping of ALD-grown ZnO thin films through Al and P substitutions
Electron doping of ALD-grown ZnO thin films through Al and P substitutions
复制标题
通过 Al 和 P 取代对 ALD 生长的 ZnO 薄膜进行电子掺杂
DOI：
10.1007/s10853-012-6942-9
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
M. Karppinen
中科院分区：
文献类型：
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作者：
T. Tynell;R. Okazaki;I. Terasaki;H. Yamauchi;M. Karppinen
以二乙基锌、三甲基铝、磷酸三甲酯和水为前驱物，采用原子层沉积法在不同温度下制备了Al和P掺杂的ZnO薄膜。发现最佳沉积温度范围为160-220 °C，此时薄膜生长稳定，并且获得具有低电阻率的结晶良好的薄膜。基于光学反射率、Seebeck系数和膜的电阻率数据来评估掺杂剂含量对膜的电荷载流子密度的影响。这两种掺杂剂被发现是有效的控制ZnO的载流子密度;系统的载流子密度的增加被证明为Al掺杂高达2at.%并且对于P掺杂高达5原子%。沉积态薄膜的电导率为100%~ 100%。
Several series of Al- and P-doped ZnO thin films have been deposited with atomic layer deposition at different temperatures using diethyl zinc, trimethyl aluminum, trimethyl phosphate, and H2O as the precursors. The optimal deposition temperature range is found at 160–220 °C where the film growth is stable and well-crystallized films with low resistivity are obtained. The effect of the dopant content on the charge carrier density of the films is evaluated based on optical reflectivity, Seebeck coefficient, and electrical resistivity data for the films. Both dopants are found to be effective in controlling the carrier density of ZnO; systematic increase in carrier density is demonstrated for Al-doping up to 2 at.% and for P-doping up to 5 at.%. The conductivity of the as-deposited films remainsn-type.