p-Si Microprobe Arrays Grown at Low Temperature by Selective VLS Using In-Situ Doping and Their Properties
p-Si Microprobe Arrays Grown at Low Temperature by Selective VLS Using In-Situ Doping and Their Properties
复制标题
原位掺杂选择性 VLS 低温生长 p-Si 微探针阵列及其性能
DOI:
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发表时间:
2007
期刊:
影响因子:
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通讯作者:
and M. Ishida
中科院分区:
文献类型:
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作者:
M. S. Islam;T. Kawashima;K. Sawada;and M. Ishida