Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution
Scalability and reliability issues of Ti/HfOx-based 1T1R bipolar RRAM: Occurrence, mitigation, and solution
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DOI：
10.1063/1.4983834
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发表时间：
2017-05
影响因子：
4
通讯作者：
S. Z. Rahaman;Heng-Yuan Lee;Yu-Sheng Chen;Yu-De Lin;Pang-Shiu Chen;Weisu Chen;Pei-Hua Wang
中科院分区：
文献类型：
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作者：
S. Z. Rahaman;Heng-Yuan Lee;Yu-Sheng Chen;Yu-De Lin;Pang-Shiu Chen;Weisu Chen;Pei-Hua Wang
可扩展性和可靠性问题是阻性开关存储器(RRAM)技术发展的最主要障碍。由于Ti/HfOx基丝状双极RRAM具有优异的存储性能和与当前工艺的工艺兼容性，本文对其可扩展性和可靠性问题进行了研究。为了实现这一目标，我们证明了晶体管和存储单元之间存在明显的相关性，这最终限制了晶体管的工作电流和尺寸以及基于Ti/HfOx的1T1R双极RRAM的性能。由于互补电阻开关(即单存储器堆栈中的CRS)和双极电阻开关之间的开关行为相似，基于Ti/HfOx的双极RRAM存在电阻钉扎(RP)问题，而第一次重置操作期间的最小电阻总是阻碍在20kΩ以下；这是通过晶体管和存储器之间的相互作用发生的。
Scalability and reliability issues are the most dominant obstacle for the development of resistive switching memory (RRAM) technology. Owing to the excellent memory performance and process compatibility with current CMOS technology of Ti/HfOx-based filamentary type bipolar RRAM, its scalability and reliability issues have been investigated in this document. Towards this goal, we demonstrate that there exists a clear correlation between the transistor and memory cell, which ultimately limits the scaling in terms of operation current and size of the transistor as well and performance of the Ti/HfOx-based 1T1R bipolar RRAM. Due to the resemblance of switching behaviour between complementary resistive switching, i.e., CRS in a single memory stack, and bipolar resistive switching, the Ti/HfOx-based bipolar RRAM suffers from resistance pinning (RP) issues, whereas the minimum resistance during the 1st RESET operation always impeded below 20 kΩ; this occurs through the interaction between the transistor and memo...