Investigation of Irradiated Silicon Detectors by Edge-TCT
Investigation of Irradiated Silicon Detectors by Edge-TCT
复制标题
利用 Edge-TCT 研究辐照硅探测器
DOI：
10.1109/tns.2010.2051957
复制
发表时间：
2010
影响因子：
1.8
通讯作者：
K. Zagar
中科院分区：
文献类型：
--
作者：
G. Kramberger;V. Cindro;I. Mandić;M. Mikuž;M. Milovanovic;M. Zavrtanik;K. Zagar
利用脉冲宽度为100ps、束径为8μm的红外激光器，对未辐照和辐照的p型硅微带探测器进行了研究。电子束与表面平行并垂直于条带(Edge-TCT)，因此电子空穴对在探测器中的已知深度产生。在其中一条中测量了感应电流脉冲。用一种不需要知道有效俘获时间的新方法分析了强辐照硅探测器中的脉冲形状，以确定漂移速度、电荷收集和电场分布。研究了不同激光位置(载流子产生深度)、电压和注量(最高可达5·1015个中子cm-2)下的分布。当探测器被照射到最高注量时，发现了高电压下电荷倍增的有力证据。
A Transient Current Technique (TCT) utilizing an IR laser with 100 ps pulse width and beam diameter of FWHM = 8 μm was used to evaluate non-irradiated and irradiated p-type silicon micro-strip detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that the electron hole pairs were created at known depth in the detector. Induced current pulses were measured in one of the strips. The pulse shapes were analyzed in a new way, which does not require the knowledge of effective trapping times, to determine drift velocity, charge collection and electric field profiles in heavily irradiated silicon detectors. The profiles were studied at different laser beam positions (depth of carrier generation), voltages and fluences up to 5·1015 neutrons cm-2. A strong evidence for charge multiplication at high voltages was found with the detector irradiated to the highest fluence.