Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface
Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface
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直接测量半导体表面累积层中的量子态色散
DOI：
10.1103/physrevb.60.7752
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发表时间：
1999
影响因子：
3.7
通讯作者：
P. Soukiassian
中科院分区：
文献类型：
--
作者：
V. Aristov;G. L. Lay;V. Zhilin;G. Indlekofer;C. Grupp;A. Taleb;P. Soukiassian
我们使用高分辨率光电子能谱来测量位于半导体地下区域中创建的累积二维电子通道中的量子化能级的色散。该实验针对被约 10−2 Cs 单层覆盖的 InAs (110) 进行。根据能带色散，可以确定通道中载流子的平均有效质量。我们的研究结果得到了自洽计算和模型函数曲线拟合的进一步支持。
We use high-resolution photoemission spectroscopy to measure the dispersions of quantized energy levels located in an accumulation two-dimensional electron channel created in the subsurface region of a semiconductor. The experiments are performed for InAs (110) covered by about 10− 2 Cs monolayer. From the band dispersion, the average effective mass of the carriers in the channel is determined. Our findings are further supported by self-consistent calculations and model-function curve fitting.