Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition
Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition
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DOI：
10.1088/1674-1056/17/9/051
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发表时间：
2008-09
影响因子：
1.7
通讯作者：
Zhang Liping;Zhang Jian-jun;Shang Ze-Ren;Hu Zeng-Xin;Geng Xin-hua;Zhao Ying
中科院分区：
文献类型：
--
作者：
Zhang Liping;Zhang Jian-jun;Shang Ze-Ren;Hu Zeng-Xin;Geng Xin-hua;Zhao Ying
介绍了一种在低温衬底上制备SiGe：H薄膜的新技术--甚高频等离子体辅助反应热化学气相沉积（VHFPA-RTCVD）技术。在之前的工作中，反应热化学气相沉积（RTCVD）技术成功地用于制备SiGe：H薄膜，但衬底温度需要超过400°C。本论文采用甚高频等离子体辅助RTCVD技术，通过提高反应气体在衬底表面的温度，降低衬底温度。研究了不同锗含量的SiGe：H薄膜的生长速率、结构特性、表面形貌、光电导和暗电导，并对实验结果进行了讨论。
A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition (VHFPA-RTCVD), is introduced to prepare SiGe:H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition (RTCVD) technology was successfully used to prepare SiGe:H thin films, but the temperature of the substrate needed to exceed 400°C. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photoconductivity and dark-conductivity of SiGe:H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.