Alloying conducting channels for reliable neuromorphic computing
Alloying conducting channels for reliable neuromorphic computing
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DOI：
10.1038/s41565-020-0694-5
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发表时间：
2020-06-08
影响因子：
38.3
通讯作者：
Kim, Jeehwan
中科院分区：
文献类型：
--
作者：
Yeon, Hanwool;Lin, Peng;Kim, Jeehwan
Si忆阻器的合金导电沟道使得能够以高开关均匀性稳定和可控地操作器件。忆阻器（1）已经被提出作为新兴神经形态计算应用的人工突触（2，3）。为了在忆阻器阵列中训练神经网络，以器件电导形式的权重值的变化应该是不同的和均匀的（3）。典型地基于硅（Si）的电化学金属化（ECM）存储器（4，5）由于Si开关介质（8）中的金属离子的高迁移率而表现出良好的模拟开关能力（6，7）。然而，离子运动的大随机性导致开关可变性。在这里，我们展示了一个硅忆阻器与合金导电通道，显示了一个稳定的和可控的设备操作，这使得大规模实施的交叉阵列。导电沟道由作为主要移动的金属的常规银（Ag）与稳定开关的硅化铜（Cu）形成合金。在一个最佳的合金化比例，铜有效地调节银的运动，这有助于在空间/时间的开关均匀性，在一个大的电导范围内的稳定的数据保持和模拟电导状态的程序化对称性大大提高的实质性改善。这种合金忆阻器允许制造大规模的交叉阵列，具有高器件产量和准确的模拟编程能力。因此，我们对合金忆阻器的发现是为超越冯·诺依曼计算铺平道路的关键一步。
Alloying conduction channels of a Si memristor enables stable and controllable device operation with high switching uniformity.A memristor(1) has been proposed as an artificial synapse for emerging neuromorphic computing applications(2,3). To train a neural network in memristor arrays, changes in weight values in the form of device conductance should be distinct and uniform(3). An electrochemical metallization (ECM) memory(4,5), typically based on silicon (Si), has demonstrated a good analogue switching capability(6,7) owing to the high mobility of metal ions in the Si switching medium(8). However, the large stochasticity of the ion movement results in switching variability. Here we demonstrate a Si memristor with alloyed conduction channels that shows a stable and controllable device operation, which enables the large-scale implementation of crossbar arrays. The conduction channel is formed by conventional silver (Ag) as a primary mobile metal alloyed with silicidable copper (Cu) that stabilizes switching. In an optimal alloying ratio, Cu effectively regulates the Ag movement, which contributes to a substantial improvement in the spatial/temporal switching uniformity, a stable data retention over a large conductance range and a substantially enhanced programmed symmetry in analogue conductance states. This alloyed memristor allows the fabrication of large-scale crossbar arrays that feature a high device yield and accurate analogue programming capability. Thus, our discovery of an alloyed memristor is a key step paving the way beyond von Neumann computing.