High-Q photonic crystal cavities in all-semiconductor photonic crystal heterostructures
High-Q photonic crystal cavities in all-semiconductor photonic crystal heterostructures
复制标题
DOI：
10.1103/physrevb.95.235303
复制
发表时间：
2017-06
影响因子：
3.7
通讯作者：
Z. Bushell;Marian Florescu;S. Sweeney
中科院分区：
文献类型：
--
作者：
Z. Bushell;Marian Florescu;S. Sweeney
光子晶体腔使得能够实现高Q因子和低模式体积谐振器，其中典型架构由薄的悬浮周期性图案化层组成，以通过强折射率引导来最大化光的限制。我们研究了一种基于异质结构的方法，包括一个高折射率的核心和较低的折射率的包层。虽然限制通常随着芯层和包层之间的折射率对比度的降低而降低，但我们表明，与直觉相反，由于包层中的光子带结构所提供的限制，仅用小的折射率对比度就可以实现Q因子> 10 - 4。这为在常规半导体异质结构中实现高Q因子腔开辟了机会，并直接应用于使用常规制造方法的电泵浦纳米腔激光器的设计。
Photonic crystal cavities enable the realization of high Q-factor and low mode-volume resonators, with typical architectures consisting of a thin suspended periodically patterned layer to maximize confinement of light by strong index guiding. We investigate a heterostructure-based approach comprising a high refractive index core and lower refractive index cladding layers. While confinement typically decreases with decreasing index contrast between the core and cladding layers, we show that, counterintuitively, due to the confinement provided by the photonic band structure in the cladding layers, it becomes possible to achieve Q factors > 10 4 with only a small refractive index contrast. This opens up opportunities for implementing high-Q factor cavities in conventional semiconductor heterostructures, with direct applications to the design of electrically pumped nanocavity lasers using conventional fabrication approaches.