Gallium nitride as a material for spintronics
Gallium nitride as a material for spintronics
复制标题
氮化镓作为自旋电子学材料
DOI：
10.1007/s11182-013-9899-5
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发表时间：
2013
影响因子：
0.6
通讯作者：
О. P. Тоlbanov
中科院分区：
文献类型：
--
作者：
S. Khludkov;I. Prudaev;О. P. Тоlbanov
综述了掺杂磁性杂质GaN的磁性研究文献：过渡金属（Mn、Cr、Fe、Ni和V）和稀土元素（Gd、Eu和Sm），以及含有高浓度镓空位和量子点的氮化镓。考虑了离子注入和MBE及MOVPE生长过程中GaN的性质。未掺杂的GaN和掺杂有过渡金属和稀土元素的GaN薄膜通常在室温下保持铁磁性质。
The literature on the magnetic properties of GaN doped with magnetic impurities: the transition metals (Mn, Cr, Fe, Ni, and V) and rare earth elements (Gd, Eu, and Sm), as well as gallium nitride containing high concentration of gallium vacancies and quantum dots is reviewed. The properties of GaN doped by ion implantation and during the MBE and MOVPE growth of layers are considered. The undoped GaN and GaN films doped with the transition metals and rare earth elements often retain ferromagnetic properties at room temperature.
影响因子：
3.7
作者：
Kazunori Sato;W. Schweika;P. Dederichs;H. Katayama‐Yoshida
通讯作者：
Kazunori Sato;W. Schweika;P. Dederichs;H. Katayama‐Yoshida