Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV
Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV
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砷掺杂富镉CdTe：大于900 mV的高开路电压太阳能电池的平衡掺杂极限和长寿命
DOI：
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发表时间：
2019
影响因子：
2.3
通讯作者：
M. Scarpulla
中科院分区：
文献类型：
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作者：
Akira Nagaoka;K. Nishioka;K. Yoshino;D. Kuciauskas;M. Scarpulla
V族元素掺杂和富Cd组分的组合是目前最有希望在保持长寿命的同时最大化p型掺杂的策略。在这项研究中，我们仔细测量了As掺杂富Cd单晶的平衡p型掺杂极限，并证明了在缓慢冷却时在低1017 cm−3范围内的掺杂极限。我们给出了掺杂效率在5×10~(16)cm−_3以上时发生自补偿的证据，但我们也证明了−_3空穴浓度为1017 cm，体寿命为>；30 ns。这种晶体允许As掺杂的CdTe光伏器件的开路电压超过900 mV。
The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 1017 cm−3 range upon slow cooling. We present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 1016 cm−3, yet we also demonstrate CdTe with >1017 cm−3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.