Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si
Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si
复制标题
Si中小角度倾斜边界Cu析出的纳米机制
DOI:
10.1103/physrevb.91.235315
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发表时间:
2015
期刊:
影响因子:
--
通讯作者:
Y. Nagai
中科院分区:
文献类型:
--
作者:
Y. Ohno;K. Inoue;K. Kutsukake;M. Deura;T. Ohsawa;I. Yonenaga;H. Yoshida;S. Takeda;R. Taniguchi;H. Otsubo;S. R. Nishitani;N. Ebisawa;Y. Shimizu;H. Takamizawa;K. Inoue;Y. Nagai
We investigate copper (Cu) precipitation at small-angle tilt boundaries on (220) in Czochralski-grown p-type silicon (Si) ingots using transmission electron microscopy, atom probe tomography, andab initiocalculations. In the initial stage of precipitation, Cu atoms agglomerate along the boundaries, forming coherent layers (less than about 2 nm thick) ofwith a body-centered-cubic structure in a metastable state (nm). As the layers thicken, they become semicoherent with misfit dislocations on the (220) interphase boundaries, reducing coherency strains. Subsequently, the metastable layers convert into incoherent polyhedrons of orthorhombicin the equilibrium state, forming interphase boundaries on {112} in Si. These results are similar to the Cu precipitation processes found in metallic alloys: the formation of Guinier-Preston zones followed by a conversion into the equilibriumphase.