Structural and optical properties of high-quality ZnTe homoepitaxial layers
Structural and optical properties of high-quality ZnTe homoepitaxial layers
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DOI：
10.1063/1.1290155
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发表时间：
2000-08
影响因子：
4
通讯作者：
J. Chang;M. Cho;H. M. Wang;H. Wenisch;T. Hanada;T. Yao;K. Sato;O. Oda
中科院分区：
文献类型：
--
作者：
J. Chang;M. Cho;H. M. Wang;H. Wenisch;T. Hanada;T. Yao;K. Sato;O. Oda
研究了高质量同质外延ZnTe薄膜的结构和光学性质。使用稀释的HF溶液的衬底表面处理在生长器件质量的ZnTe层中起着关键作用。基于晶体截断棒法的ZnTe外延层的X射线衍射分析表明，在HF处理的衬底上生长的同质外延ZnTe膜可以被视为没有界面层的理想截断晶体，而在没有HF处理的衬底上生长的ZnTe层表明存在界面层，这可能导致ZnTe覆盖层的结晶度降低。用HF处理的同质外延ZnTe层的晶体质量的特征在于由15.6弧秒的极窄的X射线衍射线宽和占主导地位的非常尖锐的激子发射线，在光致发光（PL）光谱中具有显著降低的深能级发射强度。在高质量ZnT薄膜的PL谱中观察到三条中性受主的束缚激子发射线。
The structural and optical properties of high-quality homoepitaxial ZnTe films are investigated. A substrate surface treatment using diluted HF solution plays a key role in growing device-quality ZnTe layers. X-ray diffraction analysis of ZnTe epilayers based on the crystal-truncation-rod method suggests that a homoepitaxial ZnTe film grown on a HF-treated substrate can be regarded as an ideal truncated crystal without an interfacial layer, while a ZnTe layer grown on a substrate without HF treatment suggests the presence of an interfacial layer which may lead to degraded crystallinity of ZnTe overlayers. The crystal quality of the homoepitaxial ZnTe layers with HF treatments are characterized by an extremely narrow x-ray diffraction linewidth of 15.6 arcsec and dominant very sharp excitonic emission lines with dramatically reduced deep-level emission intensity in the photoluminescence (PL) spectrum. Three bound excitonic emission lines at neutral acceptors are observed in the PL from the high-quality ZnT...