Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire Transistors
Functionality-Enhanced Logic Gate Design Enabled by Symmetrical Reconfigurable Silicon Nanowire Transistors
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DOI：
10.1109/tnano.2015.2429893
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发表时间：
2015-05
影响因子：
2.4
通讯作者：
J. Trommer;A. Heinzig;T. Baldauf;S. Slesazeck;T. Mikolajick;W. Weber
中科院分区：
文献类型：
--
作者：
J. Trommer;A. Heinzig;T. Baldauf;S. Slesazeck;T. Mikolajick;W. Weber
可重构硅纳米线场效应晶体管（RFFET）联合收割机将经典单极p型和n型FET的功能结合在一个通用器件中。在本文中，我们展示的设备表现出完全对称的p和n-功能，同时具有相同的几何形状。基于TCAD模拟，评估了数字电路集成的缩放趋势和可行性。逻辑努力的方法是适用于分析电路拓扑结构的根本差异，使用这种独特类型的多栅极晶体管。我们介绍了一组多功能逻辑门的基础上RFT提供所有基本的布尔函数，包括NAND/NOR，AND/OR，和XOR/XNOR，并比较它们与经典的实现。两个1位全加器的基础上，这些门作为一个有见地的例子，射频是一种可能的解决方案，以增加系统的功能。此外，它示出了一个不对称的晶体管布局与单独优化的两个顶栅可以用来提高这些电路的速度。
Reconfigurable silicon nanowire field-effect transistors (RFETs) combine the functionality of classical unipolar p-type and n-type FETs in one universal device. In this paper, we show devices exhibiting full symmetry between pand n-functionality, while having identical geometry. Scaling trends and feasibility for digital circuit integration are evaluated based on TCAD simulations. The method of logical effort is applied to analyze fundamental differences in circuit topology using this unique type of multigate transistors. We introduce a set of multifunctional logic gates based on RFETs providing all basic Boolean functions, including NAND/NOR, AND/OR, and XOR/XNOR, and compared them with classical implementations. Two 1-bit full adders based on those gates are presented as an insightful example that RFETs are one possible solution to increase the system functionality. Moreover, it is shown that an asymmetric transistor layout with individual optimization of both top gates can be used to increase the speed of those circuits.