Resist Filling Study for UV Nanoimprint Lithography Using Stamps with Various Micro/Nano Ratios
Resist Filling Study for UV Nanoimprint Lithography Using Stamps with Various Micro/Nano Ratios
复制标题
使用不同微/纳米比率的印模进行紫外纳米压印光刻的抗蚀剂填充研究
DOI：
10.3390/mi9070335
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发表时间：
2018-07-01
期刊：
影响因子：
3.4
通讯作者：
Wang, Haibin
中科院分区：
文献类型：
--
作者：
Yin, Minqi;Sun, Hongwen;Wang, Haibin
由于微纳混合结构在图案化方面的快速发展，它们在各个领域得到了越来越广泛的应用。为了改进邮票设计，有必要研究利用紫外光(UV)纳米压印光刻技术(UV-NIL)填充多尺度孔洞的邮票抗蚀剂。在此，在单个特征的水平上进行了模拟，以解释微米和纳米尺度线条图案的不同填充行为。微米/纳米尺度的空腔之间存在明显的相互作用。这些都延迟了抗蚀剂填充过程。使用不同微纳比为1：1、1：2和1：3的测试图案进行了几个芯片规模的模拟。微纳比对整体印记质量有一些微小的影响。在压印过程中，微纳尺度图形的边界压差变得明显，达到0.04 Mpa。随着纳米结构比例的增加，残留层越厚，空洞填充越差。
Mixed micro- and nanoscale structures are gaining popularity in various fields due to their rapid advances in patterning. An investigation in stamp resist filling with multiscale cavities via ultraviolet (UV) nanoimprint lithography (UV-NIL) is necessary to improve stamp design. Here, simulations at the level of individual features were conducted to explain different filling behaviors of micro- and nanoscale line patterns. There were noticeable interactions between the micro-/nanoscale cavities. These delayed the resist filling process. Several chip-scale simulations were performed using test patterns with different micro/nano ratios of 1:1, 1:2, and 1:3. There were some minor influences that changed the micro/nano ratios on overall imprint qualities. During the imprinting process, the pressure difference at the boundary between micro- and nanoscale patterns became obvious, with a value of 0.04 MPa. There was a thicker residual layer and worse cavity filling when the proportion of nanoscale structures increased.