Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer

Efficient THz radiation from a nanocrystalline silicon-based multi-layer photomixer
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来自纳米晶硅多层光混频器的高效太赫兹辐射

DOI：
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发表时间：
2008
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通讯作者：
E. Rafailov
E. Rafailov
中科院分区：
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文献类型：
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作者：
N. Daghestani;G. Sokolovskii;N. Bazieva;A. V. Tolmatchev;E. Rafailov

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在本文中，我们提出了一种新型的基于非晶/纳米晶-Si的多层光混合器。这种器件意味着，通过增加吸收长度和通过使用与GaAs相比具有更高热导率的衬底来减少器件过热，可以提高从光功率到THz发射的转换效率。我们的计算表明，从一个两层的硅基光混合器的输出功率是至少10倍以上，从传统的LT-GaAs光混合器在1太赫兹。
In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.