Anisotropic spin-splitting and spin-relaxation in asymmetric zinc blende semiconductor quantum structures -: art. no. 075322
Anisotropic spin-splitting and spin-relaxation in asymmetric zinc blende semiconductor quantum structures -: art. no. 075322
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DOI：
10.1103/physrevb.68.075322
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发表时间：
2003-08-15
影响因子：
3.7
通讯作者：
Winkler, R
中科院分区：
文献类型：
--
作者：
Kainz, J;Rössler, U;Winkler, R
由于D 'yakonov-Perel'机制的自旋弛豫与电子态的自旋分裂密切相关。本文用多带包络函数方法自洽地计算了n-（001）Zn_xO_3半导体量子结构中电子子带的各向异性自旋分裂，并由此确定了自旋弛豫速率。在（001）平面上发现的不同自旋分量的自旋弛豫速率的巨大各向异性可以归因于体反转和量子阱反转不对称之间的相互作用。面内弛豫速率之一可能表现出对载流子密度的显著非单调依赖性。
Spin relaxation due to the D'yakonov-Perel' mechanism is intimately related with the spin splitting of the electronic states. We determine the spin relaxation rates from anisotropic spin splittings of electron subbands in n-(001) zinc blende semiconductor quantum structures calculated self-consistently in the multiband envelope function approach. The giant anisotropy of spin relaxation rates found for different spin components in the (001) plane can be ascribed to the interplay between the bulk and quantum well inversion asymmetry. One of the in-plane relaxation rates may exhibit a striking nonmonotonous dependence on the carrier density.