Lateral patterning of GaN polarity using wet etching process
Lateral patterning of GaN polarity using wet etching process
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使用湿法蚀刻工艺对 GaN 极性进行横向图案化
DOI：
10.1002/pssc.200983643
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
K. Onabe
中科院分区：
文献类型：
--
作者：
Y. Fukuhara;R. Katayama;K. Onabe
采用湿法刻蚀工艺实现了GaN极性的横向图形化。用RHEED、KOH腐蚀、显微拉曼散射和Kelvin力显微镜研究了GaN薄膜的晶格极性。我们已经证实了晶格极性反转的GaN异质结构的高晶体质量的全湿法工艺制造。N-极性和Ga-极性GaN区域的表面电势之间的差异源自自发极化方向的反转，这是从压电极化与自发极化相比可以忽略不计的事实推导出来的。KOH腐蚀结果与上述结果一致。这项工作是第一个和直接的示范极性反转GaN异质结的成功制造的全湿法工艺。我们提出了方便的全湿法工艺的可行性，用于制造有效的非线性频率转换的准相位匹配波导和光子晶体（© 2010 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
A lateral patterning of GaN polarity using wet etching process is demonstrated. The lattice polarity of a GaN film is examined by RHEED, KOH etching, micro-Raman scattering and Kelvin force microscopy investigations. We have confirmed the high crystal quality of the lattice-polarity inverted GaN heterostructure fabricated by the all-wet process. The difference between the surface potentials of the N-polar and Ga-polar GaN regions originates from the inversion of the direction of the spontaneous polarization as deduced from the fact that the piezoelectric polarization is negligible compared with the spontaneous polarization. The KOH etching result is consistent with the above mentioned result. This work is the first and direct demonstration for the successful fabrication of the polarity-inverted GaN heterostructure by an all-wet process. We suggest the feasibility of the convenient all wet process for the fabrication of the quasi-phase-matched waveguides and photonic crystals for efficient nonlinear frequency conversion (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)