Carrier recombination rates in narrow-gap InAs/Ga 1-x In x Sb-based superlattices
Carrier recombination rates in narrow-gap InAs/Ga 1-x In x Sb-based superlattices
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窄带隙 InAs/Ga 1-x In x Sb 基超晶格中的载流子复合率
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
T. Boggess
中科院分区：
文献类型：
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作者：
M. Flatté;C. Grein;T. Hasenberg;S. A. Anson;D. Jang;J. Olesberg;T. Boggess
Department of Physical and Astronomy, University of Iowa, Iowa City, Iowa 52242;Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242;and Department of Electrical and Computer Engineering, University of Iowa, Iowa City, Iowa 52242~1997年10月6日收稿；修订稿于 1998 年 6 月 4 日收到！我们对具有复杂能带结构的窄能隙半导体超晶格中俄歇复合率的理论计算和实验测量进行了比较。计算和测量表明该速率取决于密度 n
Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242;Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242;and Department of Electrical and Computer Engineering, University of Iowa, Iowa City, Iowa 52242~Received 6 October 1997; revised manuscript received 4 June 1998!We present a comparison of theoretical calculations and experimental measurements of the Auger recom-bination rate in a narrow-gap semiconductor superlattice with a complex band structure. The calculations andmeasurements indicate that the rate depends on density as n