Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
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大芯片高功率深紫外发光二极管
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
R. Gaska
中科院分区：
文献类型：
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作者：
M. Shatalov;Wenhong Sun;Y. Bilenko;A. Sattu;Xuhong Hu;Jianyu Deng;Jinwei Yang;M. Shur;C. Moe;M. Wraback;R. Gaska
为高功率应用制造了结面积高达 1 mm2 的单芯片深紫外发光二极管。横向几何器件专为低工作电压、均匀电流分布和发射而设计，从而显着改善高电流性能。发射波长为 273 nm 和 247 nm 的器件的最大连续光功率分别为 30 和 6 mW。
Single chip deep ultraviolet light-emitting diodes with junction area up to 1 mm2 were fabricated for high power applications. Lateral geometry devices were designed for low operating voltage, uniform current spreading and emission resulting in substantial improvement of high current performance. The maximum CW optical power of 30 and 6 mW was achieved for devices emitting at 273 and 247 nm, respectively.